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FQB7N65C 650V N-Channel MOSFET
QFET
FQB7N65C
650V N-Channel MOSFET
Features
• • • • • • 7A, 650V, RDS(on) = 1.
4Ω @VGS = 10 V Low gate charge ( typical 28 nC) Low Crss ( typical 12 pF) Fast switching 100% avalanche tested Improved dv/dt capability
September 2006 ®
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficient switched mode...