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IDT10S60C
2nd Generation thinQ!TM SiC
Schottky Diode
Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior • High surge current capability • Pb-free lead plating; RoHs compliant • Qualified according to JEDEC1) for target applications • Breakdown voltage tested at 5mA2)
Product Summary V DC Qc IF 600 24 10 V nC A
PG-TO220-2-2
thinQ! 2G Diode specially designed for fast switching applications like: • CCM PFC • Motor Drives Type IDT10S60C Package PG-TO220-2-2 Marking I F=5 A, T j=25 °C D10S60C Pin 1 C Pin 2 A
Maximum ratings, at T ...