| Part Number | IRH7450 |
| Manufacturer | International Rectifier |
| Title | (IRH7450 / IRH8450) REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR |
| Description | www.DataSheet4U.com PD - 91807A REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR 500Volt, 0.45Ω , MEGA RAD HARD HEXFET International Rect... |
| Features |
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Radiation Hardened up to 1 x 106 Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma Dot (Flash X-Ray) Hardened Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Rating Dynamic dv/dt Rating Simpl...
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| File Size | 327.89KB |
| Datasheet |
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IRH7450SE : www.DataSheet4U.com Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD 9.1390 REPETITIVE AVALANCHE AND dv/dt RATED IRH7450SE N-CHANNEL HEXFET® TRANSISTOR 500 Volt, 0.51Ω , (SEE) RAD HARD HEXFET International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate virtual immunity to SEE failure. Additionally, under identical pre- and post-radiation test conditions, International Rectifier’s RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose. No compensation in gate drive circuitry is required. These devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal o.