Part Number
|
HY64UD16322M |
Manufacturer
|
Hynix Semiconductor |
Description
|
2M x 16 bit Low Low Power 1T/1C Pseudo SRAM |
Published
|
Dec 13, 2006 |
Detailed Description
|
com
HY64UD16322M Series
Document Title
2M x 16 bit Low Low Power 1T/1C Pseudo SRAM
Revision history
R...
|
Datasheet
|
HY64UD16322M
|
Overview
com
HY64UD16322M Series
Document Title
2M x 16 bit Low Low Power 1T/1C Pseudo SRAM
Revision history
Revision No.
History
1.
0 1.
1 Initial Revised - Change Pin Connection - Improve tOE from 45ns to 30ns - Correct State Diagram 1.
2 Revised - Correct Package Dimension - Change Absolute Maximum Ratings 1.
3 Revised - DC Electrical Characteristics (ISB1,IDPD,ICC1) - State Diagram - Power Up Sequence - Deep Power Down Sequence - Read/Write Cycle Note - Release standby current from 100µA to 120µA 1.
4 1.
5 Revised - DC Electrical Characteristics (ICC1: 3mA - 5mA) Revised - Add 70ns Part - Power Up Sequence 1.
6 Revised - Improve ICC2@70ns 30mA to 25mA - Improve ICC2@85ns 30mA to 20mA...
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