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BLH3355
NPN EPITAXIAL SILICON RF
TRANSISTOR CHIP (BLH3355)
Description
NPN epitaxial silicon RF
transistor for microwave low-noise amplification
Features
Low noise and high gain bandwidth product High power gain
Applications
UHF / VHF wide band amplifier
Structure
Planar type Electrodes: Aluminum alloy Backside metal: Au alloy
Size
Chip size: 370µm ×370µm Chip thickness: 220±20µm.
Pad size: φ100µm
ABSOLUTE MAXIMUM RATING
Symbol
VCBO VCEO VEBO IC Ptot Tj Tstg
Parameter
Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature
Value
20 12 3.
0 100 200 150 −65 to +...