www.
DataSheet4U.
com ADVANCE TECHNICAL INFORMATION DSEE30-12A HiPerFREDTM Epitaxial Diode IFAV = 30 A VRRM = 1200 Vc trr = 30 ns VRRMc V 1200 VRRM V 600 Type TO-247 AD DSEE30-12A 1 2 3 1 2 3 Symbol IFRMS IFAVM c IFSM EAS IAR TVJ TVJM Tstg TL Ptot Md Weight Conditions TC = 90°C; rectangular, d = 0.
5 TVJ = 45°C; tp = 10 ms (50 Hz), sine TVJ = 25°C; non-repetitive IAS = 1.
3 A; L = 180 µH VA = 1.
5· VR typ.
; f = 10 kHz; repetitive Maximum Ratings 60 30 200 0.
2 0.
1 -55.
.
.
+175 175 -55.
.
.
+150 A A A mJ ● ● Features Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 A °C °C °C °C W Nm/ lb.
in.
g ...

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)