Part Number
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HY5756820CT |
Manufacturer
|
Hynix Semiconductor |
Description
|
4 Banks x 8M x 8Bit Synchronous DRAM |
Published
|
Dec 22, 2006 |
Detailed Description
|
www.DataSheet4U.com
HY57V56820C(L)T
4 Banks x 8M x 8Bit Synchronous DRAM
DESCRIPTION
The HY57V56820C is a 268,435,456bi...
|
Datasheet
|
HY5756820CT
|
Overview
www.
DataSheet4U.
com
HY57V56820C(L)T
4 Banks x 8M x 8Bit Synchronous DRAM
DESCRIPTION
The HY57V56820C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth.
The HY57V56820C is organized as 4banks of 8,388,608x8.
The HY57V56820C is offering fully synchronous operation referenced to a positive edge of the clock.
All inputs and outputs are synchronized with the rising edge of the clock input.
The data paths are internally pipelined to achieve very high bandwidth.
All input and output voltage levels are compatible with LVTTL.
Programmable options include the length of pipeline (Read latency of 2 or 3), the...
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