IRLS610A

www.DataSheet4U.com Advanced Power MOSFET FEATURES ! Avalanche Rugged Technology ! Rugged Gate Oxide Technology ! Lower Input Capacitance ! Improved Gate Charge ! Extended Safe Operating Area ! Lower Leakage Current : 10 μA (Max.) @ VDS = 200V ! Lower RDS(ON) : 1.185Ω (Typ.) IRLS610A BVDSS = 200 V RDS(on) = 0.046Ω ID = 2.5 A TO-220F 1 2 3 1.Gate 2. Dra...