Part Number
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K4M51163LC |
Manufacturer
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Samsung semiconductor |
Description
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8M x 16Bit x 4 Banks Mobile SDRAM |
Published
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Dec 23, 2006 |
Detailed Description
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com
K4M51163LC - R(B)N/G/L/F
8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES
• VDD/VDDQ = 2.5V/2.5...
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Datasheet
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K4M51163LC
|
Overview
com
K4M51163LC - R(B)N/G/L/F
8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES
• VDD/VDDQ = 2.
5V/2.
5V • LVCMOS compatible with multiplexed address.
• Four banks operation.
• MRS cycle with address key programs.
-.
CAS latency (1, 2 & 3).
-.
Burst length (1, 2, 4, 8 & Full page).
-.
Burst type (Sequential & Interleave).
• EMRS cycle with address key programs.
• All inputs are sampled at the positive going edge of the system clock.
• Burst read single-bit write operation.
• Special Function Support.
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PASR (Partial Array Self Refresh).
-.
Internal TCSR (Temperature Compensated Self Refresh) • DQM for masking.
• Auto refresh.
• 64ms refresh period (8K cycle).
• Commercial T...
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