Part Number
|
IRFM210A |
Manufacturer
|
Fairchild Semiconductor |
Description
|
Advanced Power MOSFET |
Published
|
Dec 25, 2006 |
Detailed Description
|
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Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input...
|
Datasheet
|
IRFM210A
|
Overview
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DataSheet4U.
com
Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.
) @ VDS = 200V Low RDS(ON) : 1.
169 Ω (Typ.
)
IRFM210A
BVDSS = 200 V RDS(on) = 1.
5 Ω ID = 0.
77 A
SOT-223
2 1 3
1.
Gate 2.
Drain 3.
Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TA=25oC ) Continuous Drain Current (TA=70 oC ) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt To...
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