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NEC's MEDIUM POWER
NPN SILICON HIGH FREQUENCY NE677M04
TRANSISTOR
FEATURES
• • • • HIGH GAIN BANDWIDTH: fT = 15 GHz HIGH OUTPUT POWER: P-1dB = 15 dBm at 1.
8 GHz HIGH LINEAR GAIN: GL = 15.
5 dB at 1.
8 GHz NEW LOW PROFILE M04 PACKAGE: SOT-343 footprint, with a height of only 0.
59 mm Flat lead style for better RF performance
+0.
40-0.
05 2
+0.
30
2.
05±0.
1 1.
25±0.
1
3
2.
0±0.
1
R54
1.
25 0.
650.
65
0.
650.
65
DESCRIPTION
NEC's NE677M04 is fabricated using NEC's HFT3 wafer process.
With a transition frequency of 15 GHz, the NE677M04 is usable in applications from 100 MHz to 3 GHz.
The NE677M04 provides P1dB of 15 dBm, even with low voltage and low current, making this device an e...