Part Number
|
HE8812SG |
Manufacturer
|
Hitachi Semiconductor |
Description
|
GaAlAs Infrared Emitting Diode |
Published
|
Dec 30, 2006 |
Detailed Description
|
www.DataSheet4U.com
HE8812SG
GaAlAs Infrared Emitting Diode
ODE-208-1000A (Z) Rev.1 Jan. 2003 Description
The HE8812SG...
|
Datasheet
|
HE8812SG
|
Overview
www.
DataSheet4U.
com
HE8812SG
GaAlAs Infrared Emitting Diode
ODE-208-1000A (Z) Rev.
1 Jan.
2003 Description
The HE8812SG is a GaAlAs double heterojunction structure 870 nm band light emitting diode.
It is suitable for use as the light source in a wide range of optical control and sensing equipment.
Features
• High efficiency and high output power
Package Type • HE8812: SG1 Internal Circuit
1
2
HE8812SG
Absolute Maximum Ratings
(TC = 25°C)
Item Forward current Reverse voltage Operating temperature Storage temperature Symbol IF VR Topr Tstg Value 250 3 –20 to +60 –40 to +90 Unit mA V °C °C
Optical and Electrical Characteristics
(TC = 25°C)
Item Optical output power Peak wavelength Spectral...
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