com
PD - 94442
IRG4PC60F
INSULATED GATE BIPOLAR
TRANSISTOR
Features
• Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, 20 kHz in resonant mode).
• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency.
• Industry standard TO-247AC package.
C
Fast Speed IGBT
VCES = 600V
G E
VCE(on) typ.
= 1.
50V
@VGE = 15V, IC = 60A
n-channel
Benefits
• Generation 4 IGBT's offer highest efficiency available • IGBT's optimized for specified application conditions • Designed for best performance when used with IR Hexfred & IR Fred companion diodes.
TO-247AC
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25°C IC @ TC = 100°C...