Part Number
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DF3A6.8FE |
Manufacturer
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Toshiba Semiconductor |
Description
|
Diodes |
Published
|
Jan 12, 2007 |
Detailed Description
|
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DF3A6.8FE
TOSHIBA Diodes for Protecting Against ESD Epitaxial Planar Type
DF3A6.8FE
Diodes for Pro...
|
Datasheet
|
DF3A6.8FE
|
Overview
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DF3A6.
8FE
TOSHIBA Diodes for Protecting Against ESD Epitaxial Planar Type
DF3A6.
8FE
Diodes for Protecting Against ESD
Unit in mm l Because two devices are mounted on an ultra compact package, it is possible to allow reducing the number of the parts and the mounting cost.
l Zener voltage correspond to E24 series.
Maximum Ratings (Ta = 25°C)
Characteristic Power dissipation Junction temperature Storage temperature range Symbol P Tj Tstg Rating 100 125 −55~125 Unit mW °C °C
JEDEC EIAJ TOSHIBA Weight: 2.
3 mg
― ― 1-2SA1A
Electrical Characteristics (Ta = 25°C)
Characteristic Zener voltage Dynamic impedance Knee dynamic impedance Reverse current Symbol VZ ZZ ZZK IR Test C...
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