DatasheetsPDF.com

DF3A6.8FE

Part Number DF3A6.8FE
Manufacturer Toshiba Semiconductor
Description Diodes
Published Jan 12, 2007
Detailed Description com DF3A6.8FE TOSHIBA Diodes for Protecting Against ESD Epitaxial Planar Type DF3A6.8FE Diodes for Pro...
Datasheet DF3A6.8FE




Overview
com DF3A6.
8FE TOSHIBA Diodes for Protecting Against ESD Epitaxial Planar Type DF3A6.
8FE Diodes for Protecting Against ESD Unit in mm l Because two devices are mounted on an ultra compact package, it is possible to allow reducing the number of the parts and the mounting cost.
l Zener voltage correspond to E24 series.
Maximum Ratings (Ta = 25°C) Characteristic Power dissipation Junction temperature Storage temperature range Symbol P Tj Tstg Rating 100 125 −55~125 Unit mW °C °C JEDEC EIAJ TOSHIBA Weight: 2.
3 mg ― ― 1-2SA1A Electrical Characteristics (Ta = 25°C) Characteristic Zener voltage Dynamic impedance Knee dynamic impedance Reverse current Symbol VZ ZZ ZZK IR Test C...






Similar Datasheet






Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)