NTLGD3502N Power MOSFET 20 V, 5.
8 A/4.
6 A Dual N-Channel, DFN6 3x3 mm Package Features •ăExposed Drain Package •ăExcellent Thermal Resistance for Superior Heat Dissipation •ăLow Threshold Levels •ăLow Profile ( 1 mm) Allows It to Fit Easily into Extremely Thin Environments •ăThis is a Pb-Free Device Applications •ăDC-DC Converters (Buck and Boost Circuits) •ăPower Supplies •ăHard Disk Drives MOSFET I MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (Note 1) Steady State Power Dissipation (Note 1) t ≤ 5.
0 s Steady State TA = 25°C TA = 85°C TA = 25°C TA = 25°C VDSS VGS ID PD 20 ...

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)