NTLJF3118N
Power MOSFET and
Schottky Diode
20 V, 4.
6 A, N−Channel, with 2.
0 A
Schottky Barrier Diode, 2x2 mm WDFN Package
Features
• WDFN 2x2 mm Package Provides Exposed Drain Pad for
Excellent Thermal Conduction
• Footprint Same as SC−88 Package • 1.
8 V VGS Rated RDS(on) • Low Profile ( 0.
8 mm) for Easy Fit in Thin Environments • Low VF 2 A
Schottky Diode • This is a Pb−Free Device
Applications
• DC−DC Boost/Buck Converter • Low Voltage Hard Disk DC Power Source
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
20
V
Gate−to−Source Voltage
VGS
±12 V
Continuous Drain Current Steady TA = 25°C
ID
(Note 1)
State TA = 85°C...