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BLC6G10-160; BLC6G10LS-160
UHF power LDMOS
transistor
Rev.
01 — 12 May 2006 Objective data sheet
1.
Product profile
1.
1 General description
160 W LDMOS power
transistor for base station applications at frequencies from 800 MHz to 1000 MHz.
Table 1: Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit.
Mode of operation 2-carrier W-CDMA
[1]
f (MHz) 920 to 960
VDS (V) 32
PL(AV) (W) 32
Gp (dB) 23
ηD (%) 28
ACPR (dBc) −40[1]
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.
5 dB at 0.
01 % probability on CCDF per carrier; carrier spacing 5 MHz
CAUTION This device is sensitive to ElectroStatic Discharge (ESD).
Therefore care...