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BLC6G20-75; BLC6G20LS-75
UHF power LDMOS
transistor
Rev.
01 — 30 January 2006 Objective data sheet
1.
Product profile
1.
1 General description
75 W LDMOS power
transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.
Table 1: Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.
Mode of operation CW GSM EDGE f (MHz) 1930 to 1990 1930 to 1990 VDS PL(AV) (V) 28 28 (W) 63 29.
5 Gp (dB) 19 19 ηD (%) 52 ACPR400 ACPR600 EVMrms (dBc) (dBc) −72 (%) 1.
5
38.
5 −62.
5
CAUTION This device is sensitive to ElectroStatic Discharge (ESD).
Therefore care should be taken during transport and handling.
1.
2 Features...