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BLS2933-100
Microwave power LDMOS
transistor
Rev.
01 — 1 August 2006 Product data sheet
1.
Product profile
1.
1 General description
100 W LDMOS power
transistor (at a supply voltage of 32 V) for S-band radar applications in the 2.
9 GHz to 3.
3 GHz frequency range.
Table 1: Typical performance tp = 200 µs; δ = 12 %; Tcase = 25 °C; in a class-AB production test circuit.
Mode of operation class AB f (GHz) 2.
9 to 3.
3 VDS (V) 32 PL (W) 100 Gp (dB) 8 ηD (%) 40 IDq (mA) 20
CAUTION This device is sensitive to ElectroStatic Discharge (ESD).
Therefore care should be taken during transport and handling.
1.
2 Features
I I I I I I Easy power control Integrated ESD protection Excellent...