HiPerFETTM Power MOSFETs ISOPLUS247TM (Electrically Isolated Backside) Single MOSFET Die Avalanche Rated Preliminary Data Sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Weight 1.
6 mm (0.
063 in.
) from case for 10 s 50/60 Hz, RMS t = 1 min Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C (MOSFET chip capability) TC = 25°C, Note 1 TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C IXFR 34N80 VDSS = 800 ID25 = 28 RDS(on) = 0.
24 trr ≤ 250 ns V A Ω Maximum Ratings 800 800 ± 20 ± 30 28 600 150 60 3 5 400 -55 .
.
.
+150 150 -55 .
.
.
+150 300 2500 5...

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)