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PBSS306NX
100 V, 4.
5 A
NPN low VCEsat (BISS)
transistor
Rev.
01 — 21 August 2006 Product data sheet
1.
Product profile
1.
1 General description
NPN low VCEsat Breakthrough In Small Signal (BISS)
transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS306PX.
1.
2 Features
I I I I I Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional
transistors
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3 Applications
I I I I I High-voltage DC-to-DC conversion High-v...