www.
DataSheet4U.
com
PBSS4160DS
60 V, 1 A
NPN/
NPN low VCEsat (BISS)
transistor
Rev.
02 — 27 June 2005 Product data sheet
1.
Product profile
1.
1 General description
NPN/
NPN low VCEsat Breakthrough in Small Signal (BISS)
transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.
PNP complement: PBSS5160DS.
1.
2 Features
s s s s s Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional
transistors
1.
3 Applications
s Dual low power switches (e.
g.
motors, fans) s Automotive appl...