DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D088
PBSS4160T 60 V, 1 A
NPN low VCEsat (BISS)
transistor
Product data sheet Supersedes data of 2003 Jun 24
2004 May 12
NXP Semiconductors
60 V, 1 A
NPN low VCEsat (BISS)
transistor
Product data sheet
PBSS4160T
FEATURES • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High efficiency, reduces heat generation • Reduces printed-circuit board area required • Cost effective replacement for medium power
transistor
BCP55 and BCX55.
APPLICATIONS • Major application segments:
– Automotive 42 V power – Telecom infrastructure – Industrial.
• Power management: – DC-to-DC conversion – Supply line...