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RDX120N50
Transistors
10V Drive Nch MOS FET
RDX120N50
zStructure Silicon N-channel MOS FET zExternal dimensions (Unit : mm)
TO-220FM
10.
0
φ3.
2
4.
5 2.
8
14.
0
zFeatures 1) Low on-resistance.
2) Low input capacitance.
3) Excellent resistance to damage from static electricity.
(1)Gate
15.
0
12.
0
8.
0
2.
5
1.
3
1.
2
0.
8 2.
54
(1) (2) (3)
2.
54
0.
75
2.
6
zApplications Switching
zPackaging specifications
Package Type RDX120N50 Code Basic ordering unit (pieces) Bulk − 500
(2)Drain (3)Source
zInner circuit
∗1
∗2
(1)
(2)
(3)
∗1 GATE PROTECTION DIODE ∗2 BODY DIODE
(1) Gate (2) Drain (3) Source
zAbsolute maximum ratings (Ta=25°C)
Parameter Drain-source voltage Gate-so...