Part Number
|
IRLW610A |
Manufacturer
|
Fairchild Semiconductor |
Description
|
Advanced Power MOSFET |
Published
|
Jan 24, 2007 |
Detailed Description
|
com
$GYDQFHG 3RZHU 026)(7
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower...
|
Datasheet
|
IRLW610A
|
Overview
com
$GYDQFHG 3RZHU 026)(7
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 150° C Operating Temperature ♦ Lower Leakage Current: 10µA (Max.
) @ VDS = 200V ♦ Lower RDS(ON): 1.
185Ω (Typ.
)
IRLW/I610A
BVDSS = 200 V RDS(on) = 1.
5Ω ID = 3.
3 A
D2-PAK
2
I2-PAK
1 1 3 2 3
1.
Gate 2.
Drain 3.
Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Continuous Drain Current (TC=100°C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Ava...
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