| Part Number | IXTU01N100D |
| Manufacturer | IXYS Corporation |
| Title | N-Channel MOSFET |
| Description | Depletion Mode MOSFET N-Channel IXTY01N100D IXTU01N100D IXTP01N100D D G S Symbol VDSX VDGX VGSX VGSM IDM PD TJ TJM Tstg TL TSOLD Md Weight Tes... |
| Features |
• Normally ON Mode • International Standard Packages • Low RDS(on) HDMOSTM Process • Rugged Polysilicon Gate Cell Structure • Fast Switching Speed Advantages • Easy to Mount • Space Savings • High Power Density Applications • Level Shifting • Triggers • Solid State Relays • Current Regulators ©20... |
| File Size | 384.50KB |
| Datasheet |
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IXTU01N100 : High Voltage Power MOSFET IXTU01N100 IXTY01N100 VDSS = ID25 = RDS(on) 1000V 100mA 80 N-Channel Enhancement Mode TO-251 (IXTU) Symbol VDSS VDGR VGSS VGSM ID25 IDM PD TJ TJM Tstg TL TSOLD FC Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting force TO-251 TO-252 Maximum Ratings 1000 V 1000 V 20 V 30 V 100 mA 400 mA 25 W -55 ... +150 C 150 C -55 ... +150 C 300 °C 260 °C 1.13 / 10 Nm/lb.in. 0.40 g 0.35 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) .