com GF4435 P-Channel Enhancement-Mode MOSFET H C N T E TRE NF E G SO-8 0.
197 (5.
00) 0.
189 (4.
80) 8 5 0.
157 (3.
99) 0.
150 (3.
81) 0.
244 (6.
20) 0.
228 (5.
79) 1 4 VDS –30V RDS(ON) 20mΩ ID –8.
0A ® Dimensions in inches and (millimeters) 0.
019 (0.
48) x 45 ° 0.
010 (0.
25) 0.
05 (1.
27) 0.
04 (1.
02) 0.
245 (6.
22) Min.
0.
009 (0.
23) 0.
007 (0.
18) 0.
165 (4.
19) 0.
155 (3.
94) 0.
050 (1.
27) 0.
020 (0.
51) 0.
013 (0.
33) 0.
069 (1.
75) 0.
053 (1.
35) 0.
009 (0.
23) 0.
004 (0.
10) 0.
035 (0.
889) 0.
025 (0.
635) 0 °– 8 ° 0.
050(1.
27) 0.
016 (0.
41) 0.
050 typ.
(1.
27) Mounting Pad Layout Mechanical Data Case: SO-8 molded plastic body Terminals: Leads solderable per MIL-STD-750, Method 2026 High temperature sol...

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