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PD - 90437D
POWER MOSFET THRU-HOLE (MO-036AB)
Product Summary
Part Number IRFG5110 IRFG5110 RDS(on) 0.
7Ω 0.
7Ω ID 1.
0A -1.
0A
IRFG5110 100V, Combination 2N-2P-CHANNEL
HEXFET MOSFET TECHNOLOGY
®
CHANNEL N P
HEXFET® MOSFET technology is the key to International
Rectifier’s advanced line of power MOSFET
transistors.
The efficient geometry design achieves very low on-state resistance combined with high transconductance.
HEXFET
transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability.
They are well-suited for applications such as switching powe...