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PHD/PHP36N03LT
N-channel TrenchMOS logic level FET
Rev.
02 — 8 June 2006 Product data sheet
1.
Product profile
1.
1 General description
Logic level N-channel enhancement mode Field-Effect
Transistor (FET) in a plastic package using TrenchMOS technology.
1.
2 Features
I Logic level compatible I Low gate charge
1.
3 Applications
I DC-to-DC converters I Switched-mode power supplies
1.
4 Quick reference data
I VDS ≤ 30 V I RDSon ≤ 17 mΩ I ID ≤ 43.
4 A I Ptot ≤ 57.
6 W
2.
Pinning information
Table 1.
Pin 1 2 3 mb Pinning Description gate (G) drain (D) source (S) mounting base; connected to drain
G
[1]
Simplified outline
mb mb
Symbol
D
2 1 3 1 2 3
mbb076
S
SOT428 (DPAK)
[1...