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SSM6K07FU
TOSHIBA Field Effect
Transistor Silicon N Channel MOS Type
SSM6K07FU
DC-DC Converters High Speed Switching Applications
· · · Small package Low on resistance : Ron = 130 mΩ max (@VGS = 10 V) : Ron = 220 mΩ max (@VGS = 4 V) Low input capacitance : Ciss = 102 pF typ.
: Crss = 22 pF typ.
Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Gate-source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP PD (Note 1) Tch Tstg Rating 30 ±20 1.
5 3.
0 300 150 -55~150 Unit V V A
Drain power dissipation Channel temperature Storage temperature range
mW °C °C
JEDEC JEITA TOSHIBA
― ― 2-2J1D
Note 1: Mounted on FR4 board.
(25.
4 mm ´ 25.
4 mm ´ 1.
6 t...