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TPCF8301
TOSHIBA Field Effect
Transistor Silicon P Channel MOS Type (U-MOS III)
TPCF8301
Notebook PC Applications Portable Equipment Applications
• • • • Low drain-source ON resistance: RDS (ON) = 72 mΩ (typ.
) High forward transfer admittance: |Yfs| = 4.
7 S (typ.
) Low leakage current: IDSS = −10 µA (max) (VDS = −20 V) Enhancement model: Vth = −0.
5 to −1.
2 V (VDS = −10 V, ID = −200 µA) Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD (1) PD (2) PD (1) PD (2) EAS IAR EAR Tch Tstg Rating −20 −20 ±8 −2.
7 −10.
8 1.
35 ...