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Part Number
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FLX207MH-12 |
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Manufacturer
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Eudyna Devices |
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Description
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Ku Band Power GaAs FET |
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Published
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Feb 3, 2007 |
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Detailed Description
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com
FLX207MH-12
X, Ku Band Power GaAs FET
FEATURES
• • • • • High Output Power: P1dB = 32.5dBm(Typ.) H...
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Datasheet
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FLX207MH-12
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Overview
com
FLX207MH-12
X, Ku Band Power GaAs FET
FEATURES
• • • • • High Output Power: P1dB = 32.
5dBm(Typ.
) High Gain: G1dB = 7.
0dB(Typ.
) High PAE: ηadd = 28%(Typ.
) Proven Reliability Hermetic Metal/Ceramic Package
DESCRIPTION
The FLX207MH-12 is a power GaAs FET that is designed for general purpose applications in the X-Band frequency range as it provides superior power, gain, and efficiency.
Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg...
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