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RSF010P03
Transistors
4V Drive Pch MOS FET
RSF010P03
zStructure Silicon P-channel MOS FET zExternal dimensions (Unit : mm)
TUMT3
0.
85Max.
2.
0
zFeatures 1) Low on-resistance.
2) High speed switching.
0.
3
(3)
0.
2
0.
77
1.
7
0.
2
(1)
(2)
2.
1
0~0.
1
0.
65 0.
65
0.
17
zApplications Switching zPackaging specifications
Package Type RSF010P03 Code Basic ordering unit (pieces) Taping TL 3000
1.
3
(1) Gate (2) Source (3) Drain
Abbreviated symbol : WX
zInner circuit
(3)
(1)
∗2 ∗1
(2) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE
(1) Gate (2) Source (3) Drain
zAbsolute maximum ratings (Ta=25°C)
Parameter Drain-source voltage Gate-source voltage Drain current
Source current (B...