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Part Number
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IRG4CH40SB |
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Manufacturer
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International Rectifier |
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Description
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IGBT Die |
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Published
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Feb 5, 2007 |
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Detailed Description
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com
PD-91799A
IRG4CH40SB
IRG4CH40SB IGBT Die in Wafer Form
C
G E
1200 V Size 4 Standard Speed 6" Waf...
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Datasheet
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IRG4CH40SB
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Overview
com
PD-91799A
IRG4CH40SB
IRG4CH40SB IGBT Die in Wafer Form
C
G E
1200 V Size 4 Standard Speed 6" Wafer
Electrical Characteristics ( Wafer Form )
Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Collector Current Gate-to-Emitter Leakage Current Guaranteed (Min/Max) Test Conditions 4.
5V Max.
IC = 10A, TJ = 25°C, VGE = 15V 1200V Min.
TJ = 25°C, ICES = 250µA, VGE = 0V 3.
0V Min.
, 6.
0V Max.
VGE = VCE , TJ =25°C, IC =250µA 300 µA Max.
TJ = 25°C, VCE = 1200V ± 11 µA Max.
TJ = 25°C, VGE = +/- 20V Cr-NiV-Ag ( 1kA-2kA-2.
5kA ) 99% Al, 1% Si (4 microns) 0.
17...
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