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BLF4G10LS-120
UHF power LDMOS
transistor
Rev.
01 — 10 January 2006 Product data sheet
1.
Product profile
1.
1 General description
120 W LDMOS power
transistor for base station applications at frequencies from 800 MHz to 1000 MHz.
Table 1: Typical performance f = 920 MHz to 960 MHz; Th = 25 °C; in a class-AB production test circuit; typical values.
Mode of operation CW GSM EDGE 2-tone
[1] [2]
VDS (V) 28 28 28
PL (W) 120 48 (AV)
Gp ηD (dB) (%) 19 19 57 40 46
ACPR400 (dBc) −61 [1] -
ACPR600 (dBc) −72 [2] -
EVM (%) 1.
5 -
IMD3 (dBc) −31
120 (PEP) 19
ACPR400 at 30 kHz resolution bandwidth ACPR600 at 30 kHz resolution bandwidth
CAUTION This device is sensitive to Elect...