com
BLF4G10-120; BLF4G10S-120
UHF power LDMOS
transistor
Rev.
01 — 10 January 2006 Product data sheet
1.
Product profile
1.
1 General description
120 W LDMOS power
transistor for base station applications at frequencies from 800 MHz to 1000 MHz.
Table 1: Typical performance RF performance at Th = 25 °C in a common base class-AB test circuit.
Mode of operation CW 2-tone
[1] [2]
f (MHz)
VDS (V)
PL (W) 120 48 (AV)
Gp (dB) (typ) 19 19
ηD (%) 57 40 46
ACPR400 ACPR600 EVMrms IMD3 (dBc) (dBc) (dBc) (%) (typ) (typ) (typ) −61 [1] −72 [2] 1.
5 −31
861 to 961 28 861 to 961 28
GSM EDGE 861 to 961 28
120 (PEP) 19
ACPR400 at 30 kHz resolution bandwidth ACPR600 at 30 kHz resolution...