Part Number
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TC55NEM208AFPN |
Manufacturer
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Toshiba Semiconductor |
Description
|
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
Published
|
Feb 9, 2007 |
Detailed Description
|
www.DataSheet4U.com
TC55NEM208AFPN/AFTN55,70
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
524,28...
|
Datasheet
|
TC55NEM208AFPN
|
Overview
www.
DataSheet4U.
com
TC55NEM208AFPN/AFTN55,70
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
524,288-WORD BY 8-BIT STATIC RAM DESCRIPTION
The TC55NEM208AFPN/AFTN is a 4,194,304-bit static random access memory (SRAM) organized as 524,288 words by 8 bits.
Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 5V ± 10% power supply.
Advanced circuit technology provides both high speed and low power at an operating current of 3 mA/MHz (typ) and a minimum cycle time of 55 ns.
It is automatically placed in low-power mode at 1 µA standby current (typ) when chip enable ( CE ) is asserted high.
There are two control inputs.
CE is used ...
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