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Freescale Semiconductor Technical Data
Document Number: MRF18030B Rev.
7, 5/2006
RF Power Field Effect
Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for GSM and EDGE base station applications with frequencies from 1800 to 2000 MHz.
Suitable for FM, TDMA, CDMA and multicarrier amplifier applications.
Specified for GSM 1930 - 1990 MHz.
• Typical GSM Performance: Power Gain - 14 dB (Typ) @ 30 Watts Efficiency - 50% (Typ) @ 30 Watts • Capable of Handling 5:1 VSWR, @ 26 Vdc, 30 Watts CW Output Power Features • Internally Matched for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and ...