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Freescale Semiconductor Technical Data
Document Number: MRF6S27015N Rev.
0, 8/2006
RF Power Field Effect
Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 2000 to 2700 MHz.
Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class AB and Class C amplifier applications.
• Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 160 mA, Pout = 3 Watts Avg.
, Full Frequency Band, Channel Bandwidth = 3.
84 MHz, PAR = 8.
5 dB @ 0.
01% Probability on CCDF.
Power Gain — 14 dB Drain Efficiency — 22% ACPR @ 5 MHz Offset — - 45 dBc in 3.
84 MHz Channel Bandwidth • Capable of Handling 5:1 VSWR, @...