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RA60H1317M

Part Number RA60H1317M
Manufacturer Mitsubishi Electric
Description Silicon RF Power Modules
Published Feb 16, 2007
Datasheet RA60H1317M




Features

• Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V)
• Pout60W, ηT40% @ VDD=12.5V, VGG=5V, Pin=50mW
• Broadband Frequency Range: 135-175MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=5V
• Module Size: 66 x 21 x 9.88 mm
• Linear o...






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