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SEP8506
GaAs Infrared Emitting Diode
FEATURES • Side-emitting plastic package
• 50¡ (nominal) beam angle • 935 nm wavelength • Mechanically and spectrally matched to SDP8406 photo
transistor, SDP8106 photodarlington and SDP8000/8600 series Schmitt trigger
INFRA-20.
TIF
DESCRIPTION The SEP8506 is a gallium arsenide infrared emitting diode molded in a side-emitting red plastic package.
The chip is positioned to emit radiation through a plastic lens from the side of the package.
OUTLINE DIMENSIONS in inches (mm) Tolerance 3 plc decimals ±0.
005(0.
12) 2 plc decimals ±0.
020(0.
51)
DIM_071.
ds4
40
h
Honeywell reserves the right to make changes in order to improve design and...