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FDS8960C Dual N & P-Channel PowerTrench® MOSFET
August 2005
FDS8960C
Dual N & P-Channel PowerTrench® MOSFET
General Description
These dual N- and P-Channel enhancement mode power field effect
transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance.
These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
• •
Features
• Q1: N-Channel RDS(on) = 0.
024Ω @ VGS = 10V RDS(on) = 0.
032Ω @ VGS = 4.
5V • Q2: P-Channel RDS(on) = 0.
053Ω @ VGS = –10V RDS(on) ...