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FJY3014R
NPN Epitaxial Silicon
Transistor
November 2006
FJY3014R
NPN Epitaxial Silicon
Transistor
Features
• Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=4.
7KΩ, R2=47KΩ) • Complement to FJY4014R
Eqivalent Circuit
C
tm
C
E
S14
B E
B
SOT - 523F
Absolute Maximum Ratings *
Symbol
VCBO VCEO VEBO IC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current
Ta = 25°C unless otherwise noted
Parameter
Value
50 50 10 100 -55~150 150 200
Units
V V V mA °C °C mW
TSTG TJ
PC
Storage Temperature Range Junction Temperature
Collector Power Dissipation, by RθJA
* These ratings are limiting values ...