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Freescale Semiconductor Technical Data
Document Number: MRFG35002N6 Rev.
1, 5/2006
Gallium Arsenide PHEMT
RF Power Field Effect
Transistor
Designed for WLL/MMDS/BWA or UMTS driver applications.
Characterized from 500 to 5000 MHz.
Device is unmatched and is suitable for use in Class AB Customer Premise Equipment (CPE) applications.
• Typical Single - Carrier W - CDMA Performance: VDD = 6 Volts, IDQ = 65 mA, Pout = 158.
5 mWatts Avg.
, 3550 MHz, Channel Bandwidth = 3.
84 MHz, PAR = 8.
5 dB @ 0.
01% Probability on CCDF.
Power Gain — 10 dB Drain Efficiency — 27% ACPR @ 5 MHz Offset — - 41 dBc in 3.
84 MHz Channel Bandwidth • 1.
5 Watts P1dB @ 3550 MHz, CW • Excellent Phase Linear...