DatasheetsPDF.com

MGFS36E2527

Part Number MGFS36E2527
Manufacturer Mitsubishi Electric
Description HBT HYBRID IC
Published Feb 28, 2007
Detailed Description com MITSUBISHI SEMICONDUCTOR Preliminary Specifications are subject to change without notice. MGFS36E...
Datasheet MGFS36E2527




Overview
com MITSUBISHI SEMICONDUCTOR Preliminary Specifications are subject to change without notice.
MGFS36E2527 2.
5-2.
7GHz HBT HYBRID IC Outline Drawing 4.
5 1.
0 DESCRIPTION MGFS36E2527 is GaAs RF amplifier designed for WiMAX CPE.
FEATURES • • • • • • • • • InGaP HBT Device 6V Operation 27dBm Linear Output Power 33dB Linear Gain Integrated Output Power Detector Integrated 1-bit 19dB Step Attenuator 50ohms Matched Surface Mount Package RoHS Compliant Package 4.
5 1 2 3 10 9 8 7 6 (X-ray Top View) APPLICATION IEEE802.
16-2004, IEEE802.
16e-2005 4 5 1 2 3 4 5 6 7 8 9 10 Pin Vc Vc Vc Vc Pout Po_det GND Vref Vcont DIM IN mm FUNCTIONAL BLOCK DIAGRAM Pin Vcont (0/3V) Vc Pout Bi...






Similar Datasheet






Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)