Part Number
|
MGFS36E2527 |
Manufacturer
|
Mitsubishi Electric |
Description
|
HBT HYBRID IC |
Published
|
Feb 28, 2007 |
Detailed Description
|
com
MITSUBISHI SEMICONDUCTOR
Preliminary
Specifications are subject to change without notice.
MGFS36E...
|
Datasheet
|
MGFS36E2527
|
Overview
com
MITSUBISHI SEMICONDUCTOR
Preliminary
Specifications are subject to change without notice.
MGFS36E2527
2.
5-2.
7GHz HBT HYBRID IC
Outline Drawing
4.
5 1.
0
DESCRIPTION
MGFS36E2527 is GaAs RF amplifier designed for WiMAX CPE.
FEATURES
• • • • • • • • • InGaP HBT Device 6V Operation 27dBm Linear Output Power 33dB Linear Gain Integrated Output Power Detector Integrated 1-bit 19dB Step Attenuator 50ohms Matched Surface Mount Package RoHS Compliant Package
4.
5
1 2 3
10 9 8 7 6 (X-ray Top View)
APPLICATION
IEEE802.
16-2004, IEEE802.
16e-2005
4 5
1 2 3 4 5 6 7 8 9 10
Pin Vc Vc Vc Vc Pout Po_det GND Vref Vcont
DIM IN mm
FUNCTIONAL BLOCK DIAGRAM
Pin Vcont (0/3V) Vc
Pout
Bi...
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