Part Number
|
SSS10N60A |
Manufacturer
|
Fairchild Semiconductor |
Description
|
Advanced Power MOSFET |
Published
|
Mar 12, 2007 |
Detailed Description
|
www.DataSheet4U.com
Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input...
|
Datasheet
|
SSS10N60A
|
Overview
www.
DataSheet4U.
com
Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.
) @ VDS = 600V Low RDS(ON) : 0.
646 Ω (Typ.
)
SSS10N60A
BVDSS = 600 V RDS(on) = 0.
8 Ω ID = 5.
1 A
TO-220F
1
2
3
1.
Gate 2.
Drain 3.
Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt To...
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