Part Number
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SI5484DU-RC |
Manufacturer
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Vaishali Semiconductor |
Description
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R-C Thermal Model Parameters |
Published
|
Mar 13, 2007 |
Detailed Description
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com
Si5484DU_RC
Vishay Siliconix
R-C Thermal Model Parameters
DESCRIPTION The parametric values in th...
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Datasheet
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SI5484DU-RC
|
Overview
com
Si5484DU_RC
Vishay Siliconix
R-C Thermal Model Parameters
DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques.
These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
When implemented in P-Spice, these values have matching characteristic curves to the Single Pulse Transient Thermal Impedance curves for the MOSFET.
R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included.
Note:
For a detailed explanation of implementing these values in P-SPICE, refer to Application Note AN609 Thermal Simulations Of Power MOSFETs on P-SPI...
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