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FQB16N25C/FQI16N25C 250V N-Channel MOSFET
June 2006
QFET
FQB16N25C/FQI16N25C
250V N-Channel MOSFET
Features
• 15.
6A, 250V, RDS(on) = 0.
27 Ω @VGS = 10 V • Low gate charge ( typical 41nC) • Low Crss ( typical 68pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability
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Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high ef...