com N-CHANNEL 600V - 0.
5Ω - 12A TO-247 PowerMesh™II MOSFET TYPE STW12NB60 s s s s s STW12NB60 VDSS 600V RDS(on) 0.
6Ω ID 12 A TYPICAL RDS(on) = 0.
5Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 1 3 2 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances.
The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
TO-247...

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