www.
DataSheet4U.
com PD-94342D RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-2) Product Summary Part Number Radiation Level IRHNA67260 100K Rads (Si) IRHNA63260 300K Rads (Si) RDS(on) 0.
028Ω 0.
028Ω ID 56A∗ 56A∗ IRHNA67260 200V, N-CHANNEL TECHNOLOGY International Rectifier’s R6TM technology provides superior power MOSFETs for space applications.
These devices have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy Transfer (LET) up to 90MeV/(mg/cm2).
Their combination of very low RDS(on) and faster switching times reduces power loss and increases power density in today’s high speed switching applications such as DC-DC c...

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